STTH1502 datasheet(4/10 Pages) STMICROELECTRONICS

部品番号	STTH1502

部品情報	Ultrafast recovery diode

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4 / 10 page

Characteristics

STTH1502

4/10

Figure 5.

Relative variation of thermal

impedance, junction to case,

versus pulse duration

(TO-220FPAC)

Figure 6.

Junction capacitance versus

reverse applied voltage (typical

values)

0.0

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z

th(j-c)/Rth(j-c)

Single pulse

TO-220FPAC

tp(s)

10

100

1

10

100

1000

C(pF)

F=1MHz

V

osc=30mVRMS

T

j=25°C

VR(V)

Figure 7.

Reverse recovery charges versus

dIF/dt (typical values)

Figure 8.

Reverse recovery time versus dIF/dt

(typical values)

0

50

100

150

200

0

50

100

150

200

250

300

350

400

450

500

Q

RR(nC)

I

F=15A

V

R=160V

T

j=125°C

T

j=25°C

dIF/dt(A/µs)

0

10

20

30

40

50

60

70

80

10

100

1000

t

RR(ns)

I

F=15A

V

R=160V

T

j=125°C

T

j=25°C

dIF/dt(A/µs)

Figure 9.

Peak reverse recovery current

versus dIF/dt (typical values)

Figure 10.

Dynamic parameters versus

junction temperature

0

2

4

6

8

10

12

14

16

0

50

100

150

200

250

300

350

400

450

500

I

RM(A)

I

F=15A

V

R=160V

T

j=125°C

T

j=25°C

dIF/dt(A/µs)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

25

50

75

100

125

150

Q

RR;IRM [Tj]/ QRR;IRM [Tj=125°C]

I

RM

Q

RR

I

F=15A

V

R=160V

Tj(°C)

同様の部品番号 - STTH1502

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STTH1506DPI	72Kb / 5P	Tandem 600V HYPERFAST BOOST DIODE October 2003 - Ed: 2A
Thinki Semiconductor Co...	STTH1506DPI	5Mb / 5P	ThinkiSemi 15A,600V(2x300V) Dual Tandem Structure Ultra Fast Recovery Rectifiers
STMicroelectronics	STTH1506TPI	71Kb / 5P	Tandem 600V Hyperfast Rectifer
Thinki Semiconductor Co...	STTH1506TPI	5Mb / 5P	ThinkiSemi 15A,600V(2x300V) Dual Tandem Structure Ultra Fast Recovery Rectifiers

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同様の説明 - STTH1502

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