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STP60NS04ZB データシート(PDF) 4 Page - STMicroelectronics

部品番号 STP60NS04ZB
部品情報  N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP60NS04ZB データシート(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP60NS04ZB
4/13
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1mA, VGS =0
-40 < Tj < 175°C
33
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 16V; TJ =150°C
VDS = 16V; TJ =175°C
50
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±10V;Tj =175°C
VGS = ±16V;Tj =175°C
50
150
µA
µA
VGSS
Gate-source breakdown
voltage
IGS = 100µA
18
V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1mA
-40 < TJ < 150°C
1.734.2
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 30A
VGS = 16V, ID = 30A
11
10
15
14
m
m
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
VDS= 15V, ID=30A
20
40
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
1700
800
190
2100
1000
240
pF
pF
pF
tr(Voff)
tf
tc
Turn-on delay time
Fall time
Cross-over time
Vclamp = 30V, ID = 60A
RG =4.7Ω VGS = 10V
(see Figure 14)
60
45
100
75
60
130
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 18V, ID = 60A,
VGS = 10V, RG =4.7Ω
(see Figure 15)
48
13
16
42
nC
nC
nC


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