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CS5151GD16 データシート(PDF) 11 Page - ON Semiconductor

部品番号 CS5151GD16
部品情報  CPU 4?묪it Nonsynchronous Buck Controller
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CS5151GD16 データシート(HTML) 11 Page - ON Semiconductor

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CS5151
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11
This circuit operates by pulling the Soft Start pin high, and
the VFFB pin low, emulating a short circuit condition.
Figure 14. Implementing Shutdown with the CS5151
Shutdown
Input
5.0 V
MMUN2111T1 (SOT−23)
5
8 V
FFB
SS
IN4148
CS5151
External Power Good Circuit
An optional Power Good signal can be generated through
the use of four additional external components (see Figure
15). The threshold voltage of the Power Good signal can be
adjusted per the following equation:
VPower Good +
(R1 ) R2)
0.65 V
R2
This circuit provides an open collector output that drives
the Power Good output to ground for regulator voltages less
than VPower Good.
Figure 15. Implementing Power Good with the CS5151
5.0 V
Power Good
10 k
VOUT
PN3904
6.2 k
R1
R2
PN3904
10 k
R3
CS5151
Figure 16. CS5151 Demonstration Board During Power
Up. Power Good Signal is Activated when Output
Voltage Reaches 1.70 V.
M 2.50 ms
Trace 4− 5.0 V Input (2.0 V/div.)
Trace 3 − 12 V Input (VCC1) and (VCC2) (10 V/div.)
Trace 1− Regulator Output Voltage (1.0 V/div.)
Trace 2− Power Good Signal (2.0 V/div.)
Selecting External Components
The CS5151 can be used with a wide range of external
power components to optimize the cost and performance of
a particular design. The following information can be used
as general guidelines to assist in their selection.
NFET Power Transistors
Both logic level and standard MOSFETs can be used. The
reference designs derive gate drive from the 12 V supply
which is generally available in most computer systems and
use logic level MOSFETs. A charge pump may be easily
implemented to support 5.0 V only systems. Multiple
MOSFETs may be paralleled to reduce losses and improve
efficiency and thermal management.
Voltage applied to the MOSFET gates depends on the
application circuit used. The gate driver output is specified
to drive to within 1.5 V of ground when in the low state and
to within 2.0 V of its bias supply when in the high state. In
practice, the MOSFET gate will be driven rail to rail due to
overshoot caused by the capacitive load it presents to the
controller IC. For the typical application where VCC1 =
VCC2 = 12 V and 5.0 V is used as the source for the regulator
output current, the following gate drive is provided;
VGATE(H) + 12 V * 5.0 V + 7.0 V
(see Figure 17.)


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