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BC307BRL1G データシート(PDF) 1 Page - ON Semiconductor |
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BC307BRL1G データシート(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 4 1 Publication Order Number: BC307/D BC307B Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 Vdc Collector − Base Voltage VCBO −50 Vdc Emitter − Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 350 2.8 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.0 8.0 W mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W Thermal Resistance, Junction−to−Case RqJC 125 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping† ORDERING INFORMATION COLLECTOR 1 2 BASE 3 EMITTER http://onsemi.com BC307BRL1G TO−92 (Pb−Free) 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 2 BENT LEAD TAPE & REEL AMMO PACK 3 TO−92 CASE 29 STYLE 17 MARKING DIAGRAM BC30 7BRL1 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) |
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