BU323Z_06 datasheet(2/7 Pages) ONSEMI

部品番号	BU323Z

部品情報	NPN Silicon Power Darlington High Voltage Autoprotected

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BU323Z

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Collector−Emitter Clamping Voltage (IC = 7.0 A)

(TC = −40°C to +125°C)

VCLAMP

350

—

450

Vdc

Collector−Emitter Cutoff Current

(VCE = 200 V, IB = 0)

ICEO

—

100

μAdc

Emitter−Base Leakage Current

(VEB = 6.0 Vdc, IC = 0)

IEBO

—

50

mAdc

ON CHARACTERISTICS (1)

Base−Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 100 mAdc)

(IC = 10 Adc, IB = 0.25 Adc)

VBE(sat)

—

2.2

2.5

Vdc

Collector−Emitter Saturation Voltage

(IC = 7.0 Adc, IB = 70 mAdc)

(TC = 125°C)

(IC = 8.0 Adc, IB = 0.1 Adc)

(TC = 125°C)

(IC = 10 Adc, IB = 0.25 Adc)

VCE(sat)

—

1.6

1.8

2.1

1.7

Vdc

Base−Emitter On Voltage

(IC = 5.0 Adc, VCE = 2.0 Vdc)

(TC = −40°C to +125°C)

(IC = 8.0 Adc, VCE = 2.0 Vdc)

VBE(on)

1.1

1.3

—

2.1

2.3

Vdc

Diode Forward Voltage Drop

(IF = 10 Adc)

VF

—

2.5

Vdc

DC Current Gain

(IC = 6.5 Adc, VCE = 1.5 Vdc)

(TC = −40°C to +125°C)

(IC = 5.0 Adc, VCE = 4.6 Vdc)

hFE

150

500

—

3400

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

—

2.0

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

200

pF

Input Capacitance

(VEB = 6.0 V)

Cib

—

550

pF

CLAMPING ENERGY (see notes)

Repetitive Non−Destructive Energy Dissipated at turn−off:

(IC = 7.0 A, L = 8.0 mH, RBE = 100 Ω) (see Figures 2 and 4)

WCLAMP

200

—

mJ

SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)

Fall Time

(IC = 6.5 A, IB1 = 45 mA,

VBE(off) = 0, RBE(off) = 0,

VCC = 14 V, VZ = 300 V)

tfi

—

625

—

ns

Storage Time

tsi

—

10

30

μs

Cross−over Time

tc

—

1.7

—

μs

(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle = 2.0%.

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