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MC100E416FNG データシート(PDF) 6 Page - ON Semiconductor |
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MC100E416FNG データシート(HTML) 6 Page - ON Semiconductor |
6 / 9 page MC10E416, MC100E416 http://onsemi.com 6 Table 7. AC CHARACTERISTICS VCCx = 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = −5.0 V (Note 13) Symbol Characteristic 0°C 25°C 85°C Unit Min Typ Max Min Typ Max Min Typ Max fMAX Maximum Toggle Frequency > 2.0 GHz tPLH tPHL Propagation Delay to Output ps d(Diff) 250 350 500 250 350 500 250 350 500 D(SE) 200 350 550 200 350 550 200 350 550 tSKEW Within-Device Skew (Note 14) 50 50 50 ps tSKEW Duty Cycle Skew (Note 15) tPLH-tPHL ±10 ±10 ±10 ps tJITTER Random Clock Jitter (RMS) < 1 < 1 < 1 ps VPP(AC) Input Voltage Swing (Differential Configuration) 150 1000 150 1000 150 1000 mV tr tf Rise/Fall Time ps (20 - 80%) 100 200 350 100 200 350 100 200 350 NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 13.10 Series: VEE can vary −0.46 V / +0.06 V. 100 Series: VEE can vary −0.46 V / +0.8 V. 14.Within-device skew is defined as identical transitions on similar paths through a device. 15.Duty cycle skew defined only for differential operation when the delays are measured from the cross point of the inputs to the cross point of the outputs. |
同様の部品番号 - MC100E416FNG |
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同様の説明 - MC100E416FNG |
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