MJD112_06 datasheet(1/8 Pages) ONSEMI

部品番号	MJD112

部品情報	Complementary Darlington Power Transistors

Download	8 Pages

Scroll/Zoom	100%

メーカー	ONSEMI [ON Semiconductor]

ホームページ	http://www.onsemi.com

Logo

1 / 8 page

January, 2006 − Rev. 7

1

Publication Order Number:

MJD112/D

MJD112 (NPN)

MJD117 (PNP)

Preferred Device

Complementary Darlington

Power Transistors

DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or

driver stages in applications such as switching regulators, converters,

and power amplifiers.

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Electrically Similar to Popular TIP31 and TIP32 Series

• Pb−Free Packages are Available

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

VCEO

100

Vdc

Collector−Base Voltage

VCB

100

Vdc

Emitter−Base Voltage

VEB

5

Vdc

Collector Current

− Continuous

− Peak

IC

2

4

Adc

Base Current

IB

50

mAdc

Total Power Dissipation @ TC = 25°C

Derate above 25

°C

PD

20

0.16

W

W/

°C

Total Power Dissipation (Note1)

@ TA = 25°C

Derate above 25

°C

PD

1.75

0.014

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

6.25

°C/W

Thermal Resistance, Junction−to−Ambient

(Note 1)

RqJA

71.4

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

SILICON

POWER TRANSISTORS

2 AMPERES

100 VOLTS, 20 WATTS

DPAK−3

CASE 369D

DPAK

CASE 369C

MARKING

DIAGRAMS

Preferred devices are recommended choices for future use

and best overall value.

Y

= Year

WW

= Work Week

x

= 2 or 7

G

= Pb−Free Package

1 2

3

4

YWW

J11xG

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

1

2

3

4

YWW

J11xG

http://onsemi.com

同様の部品番号 - MJD112_06

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	MJD112	153Kb / 5P	NPN Silicon Darlington Transistor

More results

同様の説明 - MJD112_06

メーカー	部品番号	データシート	部品情報
STMicroelectronics	MJD122-1	91Kb / 8P	COMPLEMENTARY POWER DARLINGTON TRANSISTORS
ON Semiconductor	NJVMJD112	153Kb / 10P	Complementary Darlington Power Transistors November, 2013 ??Rev. 13
STMicroelectronics	TIP122FP	646Kb / 11P	Complementary power Darlington transistors
ON Semiconductor	MJE700	256Kb / 6P	DARLINGTON POWER TRANSISTORS COMPLEMENTARY 1995 REV 3
STMicroelectronics	TIP142	166Kb / 8P	Complementary power Darlington transistors
STMicroelectronics	2STW100	121Kb / 7P	Complementary power Darlington transistors
ON Semiconductor	MJD112	207Kb / 11P	Complementary Darlington Power Transistors November, 2013 ??Rev. 13
STMicroelectronics	MJD122T4	91Kb / 8P	COMPLEMENTARY POWER DARLINGTON TRANSISTORS
STMicroelectronics	STX112	343Kb / 9P	Complementary power Darlington transistors
Fairchild Semiconductor	MJD122	137Kb / 8P	Complementary Darlington Power Transistors