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MC100EP31DTG データシート(PDF) 4 Page - ON Semiconductor

部品番号 MC100EP31DTG
部品情報  3.3V / 5V ECL D Flip?묯lop with Set and Reset
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100EP31DTG データシート(HTML) 4 Page - ON Semiconductor

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MC10EP31, MC100EP31
http://onsemi.com
4
Table 5. 10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 2)
Symbol
Characteristic
−40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
26
34
44
26
35
45
28
37
47
mA
VOH
Output HIGH Voltage (Note 3)
2165
2290
2415
2230
2355
2480
2290
2415
2540
mV
VOL
Output LOW Voltage (Note 3)
1365
1490
1615
1430
1555
1680
1490
1615
1740
mV
VIH
Input HIGH Voltage (Single−Ended)
2090
2415
2155
2480
2215
2540
mV
VIL
Input LOW Voltage (Single−Ended)
1365
1690
1430
1755
1490
1815
mV
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V.
3. All loading with 50 W to VCC − 2.0 V.
Table 6. 10EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 4)
Symbol
−40°C
25°C
85°C
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
26
34
44
26
35
45
28
37
47
mA
VOH
Output HIGH Voltage (Note 5)
3865
3990
4115
3930
4055
4180
3990
4115
4240
mV
VOL
Output LOW Voltage (Note 5)
3065
3190
3315
3130
3255
3380
3190
3315
3440
mV
VIH
Input HIGH Voltage (Single−Ended)
3790
4115
3855
4180
3915
4240
mV
VIL
Input LOW Voltage (Single−Ended)
3065
3390
3130
3455
3190
3515
mV
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V.
5. All loading with 50 W to VCC − 2.0 V.
Table 7. 10EP DC CHARACTERISTICS, NECL VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 6)
Symbol
Characteristic
−40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
26
34
44
26
35
45
28
37
47
mA
VOH
Output HIGH Voltage (Note 7)
−1135 −1010
−885
−1070
−945
−820
−1010
−885
−760
mV
VOL
Output LOW Voltage (Note 7)
−1935 −1810 −1685 −1870 −1745 −1620 −1810 −1685 −1560
mV
VIH
Input HIGH Voltage (Single−Ended)
−1210
−885
−1145
−820
−1085
−760
mV
VIL
Input LOW Voltage (Single−Ended)
−1935
−1610 −1870
−1545 −1810
−1485
mV
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
6. Input and output parameters vary 1:1 with VCC.
7. All loading with 50 W to VCC − 2.0 V.


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