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MMBD6100LT1 データシート(PDF) 1 Page - ON Semiconductor

部品番号 MMBD6100LT1
部品情報  Monolithic Dual Switching Diode
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBD6100LT1 データシート(HTML) 1 Page - ON Semiconductor

  MMBD6100LT1_06 Datasheet HTML 1Page - ON Semiconductor MMBD6100LT1_06 Datasheet HTML 2Page - ON Semiconductor MMBD6100LT1_06 Datasheet HTML 3Page - ON Semiconductor  
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© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
Publication Order Number:
MMBD6100LT1/D
MMBD6100LT1
Monolithic Dual
Switching Diode
Features
Pb−Free Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, FR−5 Board
(Note 1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation Alumina Substrate
(Note 2)
TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR− 5 = 1.0
 0.75  0.062 in.
2. Alumina = 0.4
 0.3  0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mAdc)
V(BR)
70
Vdc
Reverse Voltage Leakage Current
(VR = 50 Vdc)
(For each individual diode while the
second diode is unbiased)
IR
0.1
mAdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 100 mAdc)
VF
0.55
0.8
0.7
1.1
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc)
(Figure 1)
trr
4.0
ns
Capacitance
(VR = 0 V)
C
2.5
pF
Device
Package
Shipping
ORDERING INFORMATION
MMBD6100LT1
SOT−23
3000/Tape & Reel
SOT−23
CASE 318
STYLE 9
3
CATHODE
2
ANODE
ANODE
1
MMBD6100LT3
SOT−23
10,000/Tape & Reel
DEVICE MARKING
1
5B M
G
G
5B
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBD6100LT3G
SOT−23
(Pb−Free)
10,000/Tape & Reel
3000/Tape & Reel
MMBD6100LT1G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
(Note: Microdot may be in either location)
1
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