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MC74VHC00DTR2G データシート(PDF) 3 Page - ON Semiconductor

部品番号 MC74VHC00DTR2G
部品情報  Quad 2?묲nput NAND Gate
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC74VHC00DTR2G データシート(HTML) 3 Page - ON Semiconductor

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MC74VHC00
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3
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
V
TA = 25°C
TA = −40 to
85
°C
TA = −55 to
+125
°C
Unit
Min
Typ
Max
Min
Max
Min
Max
VIH
High−Level Input
Voltage
2.0
3.0 to
5.5
1.50
VCC x
0.7
1.50
VCC x
0.7
1.50
VCC x
0.7
V
VIL
Low−Level Input
Voltage
2.0
3.0 to
5.5
0.50
VCC x
0.3
0.50
VCC x
0.3
0.50
VCC x
0.3
V
VOH
High−Level
Output Voltage
Vin = VIH or VIL
IOH = − 50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
Vin = VIH or VIL
IOH = − 4 mA
IOH = − 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.40
3.70
VOL
Low−Level
Output Voltage
Vin = VIH or VIL
IOL = 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.55
0.55
Iin
Input Leakage
Current
Vin = 5.5 V or GND
0 to 5.5
$0.1
$1.0
$2.0
mA
ICC
Quiescent Supply
Current
Vin = VCC or GND
5.5
2.0
20
40
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
Test Conditions
TA = 25°C
TA = −40 to
85
°C
TA = −55 to
+125
°C
Unit
Min
Typ
Max
Min
Max
Min
Max
tPLH,
tPHL
Propagation
Delay, A or B to Y
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
5.5
8.0
7.9
11.4
1.0
1.0
9.5
13.0
1.0
1.0
10
14.5
ns
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
3.7
5.2
5.5
7.5
1.0
1.0
6.5
8.5
1.0
1.0
7.0
9.5
Cin
Input
Capacitance
4.0
10
10
10
pF
CPD
Power Dissipation Capacitance (Note 5)
Typical @ 25
°C, VCC = 5.0 V
pF
19
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC / 4 (per gate). CPD is used to determine the
no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V, Measured in SOIC Package)
Symbol
Characteristic
TA = 25°C
Unit
Typ
Max
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
− 0.3
− 0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V


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