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MC100EP140DR2 データシート(PDF) 3 Page - ON Semiconductor

部品番号 MC100EP140DR2
部品情報  3.3V ECL Phase?묯requency Detector
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100EP140DR2 データシート(HTML) 3 Page - ON Semiconductor

  MC100EP140DR2 Datasheet HTML 1Page - ON Semiconductor MC100EP140DR2 Datasheet HTML 2Page - ON Semiconductor MC100EP140DR2 Datasheet HTML 3Page - ON Semiconductor MC100EP140DR2 Datasheet HTML 4Page - ON Semiconductor MC100EP140DR2 Datasheet HTML 5Page - ON Semiconductor MC100EP140DR2 Datasheet HTML 6Page - ON Semiconductor  
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MC100EP140
http://onsemi.com
3
Table 3. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
75 kW
Internal Input Pullup Resistor
37.5 kW
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 2 kV
> 200 V
> 2 kV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Pb Pkg
Pb−Free Pkg
SOIC−8
Level 1
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Transistor Count
457 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 4. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
PECL Mode Power Supply
VEE = 0 V
6
V
VEE
NECL Mode Power Supply
VCC = 0 V
−6
V
VI
PECL Mode Input Voltage
NECL Mode Input Voltage
VEE = 0 V
VCC = 0 V
VI v VCC
VI w VEE
6
−6
V
V
Iout
Output Current
Continuous
Surge
50
100
mA
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
SOIC−8
SOIC−8
190
130
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
Standard Board
SOIC−8
41 to 44
°C/W
Tsol
Wave Solder
Pb
Pb−Free
265
265
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 5. 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 2)
−40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
45
65
85
50
70
90
53
73
93
mA
VOH
Output HIGH Voltage (Note 3)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
VOL
Output LOW Voltage (Note 3)
1755
1880
2005
1755
1880
2005
1755
1880
2005
mV
VIH
Input HIGH Voltage (Single−Ended)
2075
2420
2075
2420
2075
2420
mV
VIL
Input LOW Voltage (Single−Ended)
1355
1675
1355
1675
1355
1675
mV
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −0.3 V.
3. All loading with 50 W to VCC − 2.0 V.


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