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BYD11 データシート(PDF) 3 Page - NXP Semiconductors

部品番号 BYD11
部品情報  Controlled avalanche rectifiers
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD11 データシート(HTML) 3 Page - NXP Semiconductors

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1996 Sep 26
3
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
IF(AV)
average forward current
Ttp =55 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
0.50 A
Tamb =60 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
0.37 A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj =Tj max prior to surge;
VR =VRRMmax
10
A
PRSM
non-repetitive peak reverse power
dissipation
t=20
µs half sinewave;
Tj =Tj max prior to surge
200
W
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.5
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VFtzt
forward voltage
IF = 0.5 A; Tj =Tj max; see Fig.6
−−
0.91
V
IF = 0.5 A; see Fig.6
−−
1.06
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYD11D
225
−−
V
BYD11G
450
−−
V
BYD11J
650
−−
V
BYD11K
900
−−
V
BYD11M
1100
−−
V
IR
reverse current
VR =VRRMmax; see Fig.7
−−
1
µA
VR =VRRMmax; Tj = 165 °C; see Fig.7
−−
75
µA
trr
reverse recovery time when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.10
3
µs
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.8
14
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
180
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT


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