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BYD11 データシート(PDF) 3 Page - NXP Semiconductors |
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BYD11 データシート(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 1996 Sep 26 3 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BYD11 series ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of associated Handbook”. IF(AV) average forward current Ttp =55 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 − 0.50 A Tamb =60 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − 0.37 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax − 10 A PRSM non-repetitive peak reverse power dissipation t=20 µs half sinewave; Tj =Tj max prior to surge − 200 W Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.5 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VFtzt forward voltage IF = 0.5 A; Tj =Tj max; see Fig.6 −− 0.91 V IF = 0.5 A; see Fig.6 −− 1.06 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYD11D 225 −− V BYD11G 450 −− V BYD11J 650 −− V BYD11K 900 −− V BYD11M 1100 −− V IR reverse current VR =VRRMmax; see Fig.7 −− 1 µA VR =VRRMmax; Tj = 165 °C; see Fig.7 −− 75 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig.10 − 3 − µs Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.8 − 14 − pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 180 K/W Rth j-a thermal resistance from junction to ambient note 1 250 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
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同様の説明 - BYD11 |
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