BCP69 datasheet(1/5 Pages) FAIRCHILD

部品番号	BCP69

部品情報	PNP General Purpose Amplifier

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BCP69 Rev. B

January 2007

BCP69

PNP General Purpose Amplifier

• This device is designed for general purpose medium power amplifiers

and switches requiring collector currents to 1.0A.

• Sourced from Process 77.

Absolute Maximum Ratings* T

a=25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150

°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics* T

a=25°C unless otherwise noted

* Device mounted on FR-4 PCB 36mm

× 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2

Electrical Characteristics* T

a = 25°C unless otherwise noted

* Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2.0%

Symbol

Parameter

Value

Units

VCEO

Collector-Emitter Voltage

-20

V

VCBO

Collector-Base Voltage

-30

V

VEBO

Emitter-Base Voltage

-5.0

V

IC

Collector Current

- Continuous

-1.5

A

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature Range

- 55 ~ +150

°C

Symbol

Parameter

Value

Units

PD

Total Device Dissipation

Derate above 25

°C

1.0

8.0

W

mW/

°C

RθJA

Thermal Resistance, Junction to Ambient

125

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVCEO

Collector-Emitter Breakdown Voltage

IC = -10mA, IB = 0

-20

V

BVCBO

Collector-Base Breakdown Voltage

IC = -1.0mA, IE = 0

-30

V

BVEBO

Emitter-Base Breakdown Voltage

IE = -100µA, IC = 0

-5.0

V

ICBO

Collector-Base Cutoff Current

VCB = -25V, IE = 0

VCB = -25V, IE = 0, Tj = 150

oC

-100

-10

nA

uA

IEBO

Emitter-Base Cutoff Current

VEB = -5.0V, IC = 0

-100

nA

hFE

DC Current Gain

IC = -5mA, VCE = -1.0V

IC = -500mA, VCE = -1.0V

IC = -1.0A, VCE = -1.0V

50

85

60

375

VCE(sat)

Collector-Emitter Saturation Voltage

IC = -1.0A, IB = -100mA

-0.5

V

VBE(on)

Base-Emitter On Voltage

IC = -1.0A, VCE = -1.0V

-1.0

V

Ccb

Collector-Base Capacitance

VCB = -10V, IE = 0, f = 1.0MHz

30

pF

hfe

Small-Signal Current Gain

IC = -50mA, VCE = -10V, f = 20MHz

2.5

SOT-223

1

2

4

3

1. Base 2. Collector 3. Emitter

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