NBSG16MNR2 datasheet(4/12 Pages) ONSEMI

部品番号	NBSG16MNR2

部品情報	2.5V/3.3V SiGe Differential Receiver/Driver with RSECL Outputs

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Table 4. MAXIMUM RATINGS

Symbol

Parameter

Condition 1

Condition 2

Rating

Unit

VCC

Positive Power Supply

VEE = 0 V

3.6

V

VEE

Negative Power Supply

VCC = 0 V

−3.6

V

VI

Positive Input

Negative Input

VEE = 0 V

VCC = 0 V

VI VCC

VI VEE

3.6

−3.6

V

VINPP

Differential Input Voltage

|D − D|

VCC − VEE w 2.8 V

VCC − VEE <

2.8 V

2.8

|VCC − VEE|

V

Iout

Output Current

Continuous

Surge

25

50

mA

IBB

VBB Sink/Source

1

mA

IMM

VMM Sink/Source

1

mA

TA

Operating Temperature Range

−40 to +85

°C

Tstg

Storage Temperature Range

−65 to +150

°C

qJA

Thermal Resistance (Junction−to−Ambient)

(Note 2)

0 LFPM

500 LFPM

0 LFPM

500 LFPM

16 FCBGA

16 QFN

108

86

41.6

35.2

°C/W

qJC

Thermal Resistance (Junction−to−Case)

1S2P (Note 2)

2S2P (Note 3)

16 FCBGA

16 QFN

5

4.0

°C/W

Tsol

Wave Solder

Pb

Pb−Free

225

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

2. JEDEC standard multilayer board − 1S2P (1 signal, 2 power)

3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.

同様の部品番号 - NBSG16MNR2

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ON Semiconductor	NBSG16MNR2	104Kb / 10P	2.5V/3.3V SiGe Differential Receiver/Driver with RSECLOutputs May, 2003 - Rev. 12
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