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BYD57K データシート(PDF) 3 Page - NXP Semiconductors

部品番号 BYD57K
部品情報  Ultra-fast soft-recovery controlled avalanche rectifiers
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD57K データシート(HTML) 3 Page - NXP Semiconductors

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1999 Nov 11
3
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
IFRM
repetitive peak forward current
Tamb =60 °C; see Figs 8 and 9
BYD57D to M
3.0
A
BYD57U and V
3.7
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave; Tj =25 °C
prior to surge; VR =VRRMmax
5.0
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.12
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max;
see Figs 13 and 14
BYD57D to M
−−
2.1
V
BYD57U and V
−−
1.7
V
VF
forward voltage
IF =1A;
see Figs 13 and 14
BYD57D to M
−−
3.6
V
BYD57U and V
−−
2.3
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD57D
300
−−
V
BYD57G
500
−−
V
BYD57J
700
−−
V
BYD57K
900
−−
V
BYD57M
1100
−−
V
BYD57U
1300
−−
V
BYD57V
1500
−−
V
IR
reverse current
VR =VRRMmax;
see Fig.15
−−
5
µA
VR =VRRMmax;
Tj = 165 °C; see Fig.15
−−
100
µA
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A;
see Fig.18
BYD57D to J
−−
30
ns
BYD57K and M
−−
75
ns
BYD57U and V
−−
150
ns
Cd
diode capacitance
f = 1 MHz; VR =0;
see Fig.16
20
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT


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