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BYG70 データシート(PDF) 2 Page - NXP Semiconductors |
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BYG70 データシート(HTML) 2 Page - NXP Semiconductors |
2 / 6 page 1996 Jun 05 2 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers BYG70 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. handbook, 4 columns MSA474 Top view Side view cathode band ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYG70D − 200 V BYG70G − 400 V BYG70J − 600 V VR continuous reverse voltage BYG70D − 200 V BYG70G − 400 V BYG70J − 600 V IF(AV) average forward current averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 − 1.00 A averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 − 0.53 A averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 − 0.39 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 20 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.4 −65 +175 °C |
同様の部品番号 - BYG70 |
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同様の説明 - BYG70 |
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