BYM26A datasheet(3/12 Pages) PHILIPS

部品番号	BYM26A

部品情報	Fast soft-recovery controlled avalanche rectifiers

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メーカー	PHILIPS [NXP Semiconductors]

ホームページ	http://www.nxp.com

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3 / 12 page

1996 May 24

3

Philips Semiconductors

Product speciﬁcation

Fast soft-recovery

controlled avalanche rectiﬁers

BYM26 series

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

IFRM

repetitive peak forward current

Ttp =55 °C; see Figs 6 and 7

BYM26A to E

−

19

A

BYM26F and G

−

21

A

IFRM

repetitive peak forward current

Tamb =65 °C; see Figs 8 and 9

BYM26A to E

−

8.0

A

BYM26F and G

−

8.5

A

IFSM

non-repetitive peak forward current

t = 10 ms half sine wave; Tj =Tj max

prior to surge; VR =VRRMmax

−

45

A

ERSM

non-repetitive peak reverse

avalanche energy

L = 120 mH; Tj =Tj max prior to surge;

inductive load switched off

−

10

mJ

Tstg

storage temperature

−65

+175

°C

Tj

junction temperature

see Figs 12 and 13

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VF

forward voltage

IF = 2 A; Tj =Tj max;

see Figs 14 and 15

BYM26A to E

−−

1.34

V

BYM26F and G

−−

1.34

V

VF

forward voltage

IF =2A;

see Figs 14 and 15

BYM26A to E

−−

2.65

V

BYM26F and G

−−

2.30

V

V(BR)R

reverse avalanche breakdown

voltage

IR = 0.1 mA

BYM26A

300

−−

V

BYM26B

500

−−

V

BYM26C

700

−−

V

BYM26D

900

−−

V

BYM26E

1100

−−

V

BYM26F

1300

−−

V

BYM26G

1500

−−

V

IR

reverse current

VR =VRRMmax;

see Fig.16

−−

10

µA

VR =VRRMmax;

Tj = 165 °C; see Fig.16

−−

150

µA

trr

reverse recovery time

when switched from

IF = 0.5 A to IR =1A;

measured at IR = 0.25 A;

see Fig.20

BYM26A to C

−−

30

ns

BYM26D and E

−−

75

ns

BYM26F and G

−−

150

ns

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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More results

同様の説明 - BYM26A

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NXP Semiconductors	BYV36	78Kb / 14P	Fast soft-recovery controlled avalanche rectifiers 1996 Jul 01
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