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BZX399-C3V0 データシート(PDF) 5 Page - NXP Semiconductors |
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BZX399-C3V0 データシート(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 1999 Jun 04 5 Philips Semiconductors Product specification Voltage regulator diodes BZX399 series Table 2 Per type BZX399-C16 to C43 Tj =25 °C unless otherwise specified. Note 1. ∆V Z =VZ at 100 µA minus VZ at 10 µA. THERMAL CHARACTERISTICS Notes 1. Device mounted on a FR4 printed circuit-board. 2. Soldering point of the cathode tab. BZX399- C XXX WORKING VOLTAGE VZ (V) IZ =50 µA VOLTAGE CHANGE ∆VZ(V) (note 1) TEMP. COEFF. SZ (mV/K) IZ =50 µA (see Fig.4) DIODE CAP. Cd (pF) at f = 1 MHz; VR =0V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb =25 °C Tol. ±5% MIN. MAX. MAX. TYP. MAX. MAX. 16 15.20 16.80 0.16 11.4 95 1.5 18 17.10 18.90 0.18 13.3 95 1.5 20 19.00 21.00 0.20 15.3 90 1.5 22 20.90 23.10 0.22 17.2 85 1.25 24 22.80 25.20 0.24 19.2 80 1.25 27 25.65 28.35 0.27 22.0 75 1.0 30 28.50 31.50 0.30 25.2 65 1.0 33 31.35 34.65 0.30 28.5 60 0.9 36 34.20 37.80 0.30 32.0 60 0.8 39 37.05 40.95 0.30 35.1 60 0.7 43 40.85 45.15 0.30 39.4 55 0.6 SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 415 K/W Rth j-s thermal resistance from junction to soldering point note 2 110 K/W |
同様の部品番号 - BZX399-C3V0 |
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同様の説明 - BZX399-C3V0 |
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