©2003 Fairchild Semiconductor Corporation

Rev. A, September 2003

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

* Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2.0%

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

40

V

Collector-Base Voltage

40

V

Emitter-Base Voltage

4.0

V

Collector Current

- Continuous

50

mA

Operating and Storage Junction Temperature Range

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

Collector-Emitter Breakdown Voltage *

40

V

Collector-Base BreakdownVoltage

40

V

Emitter-Base Breakdown Voltage

4.0

V

Collector Cut-off Current

100

nA

On Characteristics

DC Current Gain

65

225

Collector-Emitter Saturation Voltage

0.65

V

Base-Emitter Saturation Voltage

0.74

V

Small Signal Characteristics

Current gain Bandwidth Product

f = 100MHz

1100

MHz

Common-Emitter Ruerse

Transfer Capacitance

0.34

pF

Symbol

Parameter

Max.

Units

Total Device Dissipation

Derate above 25

°C

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Case

125

°C/W

Thermal Resistance, Junction to Ambient

357

°C/W

BF240

NPN RF Transistor

TO-92

1. Collector 2. Emitter 3. Base

1