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FQPF6N40CF データシート(PDF) 1 Page - Fairchild Semiconductor

部品番号 FQPF6N40CF
部品情報  400V N-Channel MOSFET
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP6N40CF/FQPF6N40CF Rev. B
February 2006
FRFET
TM
FQP6N40CF/FQPF6N40CF
400V N-Channel MOSFET
Features
• 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 70ns)
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, electronic lamp
ballasts based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
D
G
S
Symbol
Parameter
FQP6N40CF
FQPF6N40CF
Units
VDSS
Drain-Source Voltage
400
V
ID
Drain Current
- Continuous (TC = 25°C)
6
6*
A
- Continuous (TC = 100°C)
3.6
3.6*
A
IDM
Drain Current
- Pulsed
(Note 1)
24
24*
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
270
mJ
IAR
Avalanche Current
(Note 1)
6
A
EAR
Repetitive Avalanche Energy
(Note 1)
73
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
73
38
W
- Derate above 25°C
0.58
0.3
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP6N40CF
FQPF6N40CF
Units
RθJC
Thermal Resistance, Junction-to-Case
1.71
3.31
°C/W
RθCS
Thermal Resistance, Case-to-Sink
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
* Drain current limited by maximum junction temperature


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