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IRFZ24N データシート(PDF) 4 Page - NXP Semiconductors |
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IRFZ24N データシート(HTML) 4 Page - NXP Semiconductors |
4 / 8 page Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOS TM transistor Fig.5. Typical output characteristics, T j = 25 ˚C. I D = f(VDS); parameter VGS Fig.6. Typical on-state resistance, T j = 25 ˚C. R DS(ON) = f(ID); parameter VGS Fig.7. Typical transfer characteristics. I D = f(VGS) ; conditions: VDS = 25 V; parameter Tj Fig.8. Typical transconductance, T j = 25 ˚C. g fs = f(ID); conditions: VDS = 25 V Fig.9. Normalised drain-source on-state resistance. a = R DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 10 A; VGS = 10 V Fig.10. Gate threshold voltage. V GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 02468 10 0 10 20 30 40 50 ID/A VDS/V VGS/V = 16 14 12 10.0 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 0 5 10 15 20 25 2 3 4 5 6 7 8 9 gfs/S ID/A 0 5 10 15 20 25 30 50 60 70 80 90 100 110 120 RDS(ON)/mOhm VGS/V = ID/A 6 6.5 7 8 9 10 -100 -50 0 50 100 150 200 0.5 1 1.5 2 2.5 BUK959-60 Tmb / degC Rds(on) normlised to 25degC a 012 345 678 9 0 5 10 15 20 25 ID/A VGS/V Tj/C = 175 25 BUK759-60 -100 -50 0 50 100 150 200 0 1 2 3 4 5 Tj / C VGS(TO) / V max. typ. min. February 1999 4 Rev 1.000 |
同様の部品番号 - IRFZ24N |
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同様の説明 - IRFZ24N |
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