LFE15600X datasheet(4/12 Pages) PHILIPS

部品番号	LFE15600X

部品情報	NPN microwave power transistor

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メーカー	PHILIPS [NXP Semiconductors]

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4 / 12 page

1997 Feb 19

4

Philips Semiconductors

Product speciﬁcation

NPN microwave power transistor

LFE15600X

THERMAL CHARACTERISTICS

Note

1. See

“Mounting recommendations in the General part of handbook SC19a”.

CHARACTERISTICS

Tmb =25 °C unless otherwise speciﬁed.

APPLICATION INFORMATION

Microwave performance up to Tmb =25 °C in a common emitter class AB ampliﬁer.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-mb

thermal resistance from junction to mounting base

Tj = 100 °C

1.2

K/W

Rth mb-h

thermal resistance from mounting base to heatsink

note 1

0.2

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−

6mA

V(BR)CER

collector-emitter breakdown voltage

IC = 30 mA; RBE =56 Ω

30

−

V

V(BR)CBO

collector-base breakdown voltage

IC =30mA

45

−

V

V(BR)EBO

emitter-base breakdown voltage

IE =30mA

3

−

V

hFE

DC current gain

IC = 1 A; VCE = 5 V

15

100

MODE OF OPERATION

f

(GHz)

VCE

(V)

ICQ

(A)

PL1

(W)

Gpo

(dB)

ηC

(%)

Zi/ZL

(

Ω)

Class AB (CW)

1.5

24

0.2

≥55

typ. 60

≥8

typ. 8.5

typ. 50

see Figs 7

and 8

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