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2N4124 データシート(PDF) 2 Page - Fairchild Semiconductor

部品番号 2N4124
部品情報  NPN General Purpose Amplifier
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2N4124 データシート(HTML) 2 Page - Fairchild Semiconductor

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Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS*
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
25
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
µA, I
E = 0
30
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IC = 10
µA, I
C = 0
5.0
V
ICBO
Collector Cutoff Current
VCB = 20 V, IE = 0
50
nA
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
50
nA
hFE
DC Current Gain
IC = 2.0 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
120
60
360
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 5.0 mA
0.3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 50 mA, IB = 5.0 mA
0.95
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
300
MHz
Cobo
Output Capacitance
VCB = 5.0 V, IE = 0,
f = 100 kHz
4.0
pF
Cibo
Input Capacitance
VBE = 0.5 V, IC = 0,
f = 1.0 kHz
8.0
pF
Ccb
Collector-Base Capcitance
VCB = 5.0 V, IE = 0,
f = 100 kHz
4.0
pF
hfe
Small-Signal Current Gain
VCE = 10 V, IC = 2.0 mA,
f = 1.0 kHz
120
480
NF
Noise Figure
IC = 100
µA, V
CE = 5.0 V,
RS =1.0k
Ω, f=10 Hz to 15.7 kHz
5.0
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN General Purpose Amplifier
(continued)


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