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AM29SL400DT100WAF データシート(PDF) 3 Page - Advanced Micro Devices |
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AM29SL400DT100WAF データシート(HTML) 3 Page - Advanced Micro Devices |
3 / 41 page ADVANCE INFORMATION This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Pubication Am29SL400D Revision A Amendment +1 Issue Date: April 13, 2005 Visit www.amd.com for the latest information. Am29SL400D 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 1.65 to 1.95 V for read, program, and erase operations — Ideal for battery-powered applications ■ Manufactured on 0.23 µm process technology ■ High performance — Access times as fast as 90 ns ■ Ultra low power consumption (typical values at 5 MHz) — 0.2 µA Automatic Sleep Mode current — 0.2 µA standby mode current — 5 mA read current — 15 mA program/erase current ■ Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences ■ Top or bottom boot block configurations available ■ Minimum 1,000,000 erase cycle guarantee per sector ■ 20-year data retention at 125 °C ■ Package option — 48-ball FBGA ■ Compatibility with JEDEC standards — Pinout and software compatible with single-power supply Flash — Superior inadvertent write protection ■ Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion ■ Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion ■ Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ■ Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data |
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