データシートサーチシステム |
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FCB11N60 データシート(PDF) 3 Page - Fairchild Semiconductor |
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FCB11N60 データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page 3 www.fairchildsemi.com FCB11N60 Rev. A1 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperatue Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V * Notes : 1. 250 µs Pulse Test 2. T C = 25 oC V DS, Drain-Source Voltage [V] 2 468 10 10 -1 10 0 10 1 * Note 1. V DS = 40V 2. 250 µs Pulse Test -55 oC 150 oC 25 oC V GS , Gate-Source Voltage [V] 0 5 10 15 20 25 30 35 40 0.0 0.2 0.4 0.6 0.8 1.0 V GS = 20V V GS = 10V * Note : T J = 25 oC I D, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 25 oC 150 oC * Notes : 1. V GS = 0V 2. 250 µs Pulse Test V SD , Source-Drain Voltage [V] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12 V DS = 250V V DS = 100V V DS = 400V * Note : I D = 11A Q G, Total Gate Charge [nC] |
同様の部品番号 - FCB11N60_05 |
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同様の説明 - FCB11N60_05 |
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