IRF830APBF datasheet(6/8 Pages) IRF

部品番号	IRF830APBF

部品情報	HEXFET Power MOSFET

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メーカー	IRF [International Rectifier]

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IRF830APbF

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QG

QGS

QGD

VG

Charge

D.U.T.

VDS

ID

IG

3mA

VGS

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

25

50

75

100

125

150

0

100

200

300

400

500

Starting T , Junction Temperature( C)

J

°

ID

TOP

BOTTOM

2.2A

3.2A

5.0A

Fig 12d. Typical Drain-to-Source Voltage

Vs. Avalanche Current

770

775

780

785

790

0.0

1.0

2.0

3.0

4.0

5.0

A

av

I

, Avalanche Current (A)

同様の部品番号 - IRF830APBF

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	IRF830APBF	969Kb / 8P	Power MOSFET Rev. B, 02-Jun-08
Kersemi Electronic Co.,...	IRF830APBF	3Mb / 7P	Low Gate Charge Qg Results in Simple Drive Requirement
Vishay Siliconix	IRF830APBF	258Kb / 9P	Power MOSFET 01-Jan-2022
Vishay Siliconix	IRF830APBF-BE3	258Kb / 9P	Power MOSFET 01-Jan-2022

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