データシートサーチシステム |
|
IRF7477PBF データシート(PDF) 2 Page - International Rectifier |
|
IRF7477PBF データシート(HTML) 2 Page - International Rectifier |
2 / 8 page IRF7477PbF 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.80 1.3 V TJ = 25°C, IS = 11A, VGS = 0V ––– 0.65 ––– TJ = 125°C, IS = 11A, VGS = 0V trr Reverse Recovery Time ––– 91 140 ns TJ = 25°C, IF = 11A, VR=15V Qrr Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 90 140 ns TJ = 125°C, IF = 11A, VR=15V Qrr Reverse Recovery Charge ––– 140 210 nC di/dt = 100A/µs Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 500 mJ IAR Avalanche Current ––– 8.2 A Avalanche Characteristics S D G Diode Characteristics 2.3 110 A Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 35 ––– ––– S VDS = 15V, ID = 11A Qg Total Gate Charge ––– 25 38 ID = 11A Qgs Gate-to-Source Charge ––– 6.5 ––– nC VDS = 15V Qgd Gate-to-Drain ("Miller") Charge ––– 8.2 ––– VGS = 4.5V Qoss Output Gate Charge ––– 30 ––– VGS = 0V, VDS = 15V td(on) Turn-On Delay Time ––– 12 ––– VDD = 15V tr Rise Time ––– 9.8 ––– ID = 11A td(off) Turn-Off Delay Time ––– 19 ––– RG = 1.8Ω tf Fall Time ––– 5.9 ––– VGS = 4.5V Ciss Input Capacitance ––– 2710 ––– VGS = 0V Coss Output Capacitance ––– 1120 ––– VDS = 15V Crss Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz VSD Diode Forward Voltage Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA ––– 6.5 8.5 VGS = 10V, ID = 14A ––– 7.7 10 VGS = 4.5V, ID = 11A VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 24V, VGS = 0V ––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω |
同様の部品番号 - IRF7477PBF |
|
同様の説明 - IRF7477PBF |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |