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IRLD110PBF データシート(PDF) 7 Page - International Rectifier |
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IRLD110PBF データシート(HTML) 7 Page - International Rectifier |
7 / 8 page IRLD110PbF www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + + - - - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Peak Diode Recovery dv/dt Test Circuit *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS |
同様の部品番号 - IRLD110PBF |
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同様の説明 - IRLD110PBF |
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