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FDD6030L データシート(PDF) 2 Page - Fairchild Semiconductor |
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FDD6030L データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDD6030L Rev E Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 12A 100 mJ IAS Drain-Source Avalanche Current 12 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C 24 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±20 V, V DS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.9 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C –5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 12 A,TJ=125 °C 7.7 9.9 11.4 14.5 21 25 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 10 V, ID = 12 A 47 S Dynamic Characteristics Ciss Input Capacitance 1230 pF Coss Output Capacitance 325 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 150 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.5 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 10 19 ns tr Turn–On Rise Time 7 13 ns td(off) Turn–Off Delay Time 29 46 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 12 21 ns Qg Total Gate Charge 13 28 nC Qgs Gate–Source Charge 3.5 nC Qgd Gate–Drain Charge VDS = 15V, ID = 12 A, VGS = 5 V 5.1 nC |
同様の部品番号 - FDD6030L |
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同様の説明 - FDD6030L |
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