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データシートサーチシステム |
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FDD6670A データシート(PDF) 2 Page - Fairchild Semiconductor |
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FDD6670A データシート(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDD6670A Rev. E1(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 66 A 67 mJ IAS Drain-Source Avalanche Current 66 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C 26 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±20 V, V DS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.8 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C –5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 15 A,TJ=125 °C 6.3 7.9 9.5 8 10 13 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 10 V, ID = 15 A 60 S Dynamic Characteristics Ciss Input Capacitance 1755 pF Coss Output Capacitance 430 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 180 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.3 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 11 20 ns tr Turn–On Rise Time 12 21 ns td(off) Turn–Off Delay Time 29 47 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 19 34 ns Qg Total Gate Charge 16 22 nC Qgs Gate–Source Charge 4.6 nC Qgd Gate–Drain Charge VDS = 15V, ID = 15 A, VGS = 5 V 6.2 nC |
同様の部品番号 - FDD6670A_05 |
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同様の説明 - FDD6670A_05 |
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