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FDS6375 データシート(PDF) 2 Page - Fairchild Semiconductor

部品番号 FDS6375
部品情報  P-Channel 2.5V Specified PowerTrench MOSFET
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6375 データシート(HTML) 2 Page - Fairchild Semiconductor

  FDS6375 Datasheet HTML 1Page - Fairchild Semiconductor FDS6375 Datasheet HTML 2Page - Fairchild Semiconductor FDS6375 Datasheet HTML 3Page - Fairchild Semiconductor FDS6375 Datasheet HTML 4Page - Fairchild Semiconductor FDS6375 Datasheet HTML 5Page - Fairchild Semiconductor  
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FDS6375 Rev E(W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250
µA
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250
µA, Referenced to 25°C
–13
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V, VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250
µA
–0.4
–0.7
–1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA, Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –8 A
VGS = –2.5 V,
ID = –7 A
VGS= –4.5 V, ID =–8A, TJ=125
°C
14
19
18
24
32
39
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–50
A
gFS
Forward Tr ansconductance
VDS = –5 V,
ID = –8 A
35
S
Dynamic Characteristics
Ciss
Input Capacitance
2694
pF
Coss
Output Capacitance
480
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
229
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
12
22
ns
tr
Turn–On Rise Time
9
17
ns
td(off)
Turn–Off Delay Time
124
197
ns
tf
Turn–Off Fall Time
VDD = –10V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
57
92
ns
Qg
Total Gate Charge
26
36
nC
Qgs
Gate–Source Charge
5
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –8 A,
VGS = –4.5 V
6
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–2.1
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –2.1 A
(Note 2)
–0.7
–1.2
V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design.
a) 50 °C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105 °C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125 °C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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