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FDS6912A データシート(PDF) 1 Page - Fairchild Semiconductor

部品番号 FDS6912A
部品情報  Dual N-Channel Logic Level PowerTrench MOSFET
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6912A データシート(HTML) 1 Page - Fairchild Semiconductor

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July 2003
©2003 Fairchild Semiconductor Corporation
FDS6912A Rev D(W)
FDS6912A
Dual N-Channel Logic Level PowerTrench
® MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 6 A, 30 V.
RDS(ON) = 28 m
Ω @ V
GS = 10 V
RDS(ON) = 35 m
Ω @ V
GS = 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D2
D2
D1
D1
S2
G2
S1
G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
– Continuous
(Note 1a)
6
A
– Pulsed
20
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.0
PD
(Note 1c)
0.9
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6912A
FDS6912A
13’’
12mm
2500 units


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