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FDS8670 データシート(PDF) 4 Page - Fairchild Semiconductor

部品番号 FDS8670
部品情報  30V N-Channel PowerTrench MOSFET
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8670 データシート(HTML) 4 Page - Fairchild Semiconductor

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FDS8670 Rev C (W)
Typical Characteristics (continued)
0
2
4
6
8
10
0
10
203040
5060
Qg, GATE CHARGE (nC)
ID = 21A
VDS = 10V
15V
20V
0
1000
2000
3000
4000
5000
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Ciss
Crss
Coss
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC
1s
100ms
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
10ms
1ms
100µs
10s
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.


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