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FDZ201N データシート(PDF) 2 Page - Fairchild Semiconductor |
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FDZ201N データシート(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDZ201N Rev F2 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 14 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.6 0.8 1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 9 A VGS = 2.5 V, ID = 6.5 A VGS = 4.5 V, ID = 9 A, TJ=125°C 14 20 20 18 30 28 m Ω gFS Forward Transconductance VDS = 5 V, ID = 9 A 33 S Dynamic Characteristics Ciss Input Capacitance 1127 pF Coss Output Capacitance 268 pF Crss Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz 134 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 8 16 ns tr Turn–On Rise Time 11 20 ns td(off) Turn–Off Delay Time 26 42 ns tf Turn–Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 8 16 ns Qg Total Gate Charge 11 15 nC Qgs Gate–Source Charge 2 nC Qgd Gate–Drain Charge VDS = 10 V, ID = 9 A, VGS = 4.5 V 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 1.7 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.7 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time 20 nS Qrr Diode Reverse Recovery Charge IF = 9A, diF/dt = 100 A/µs 14 nC Notes: 1. R θJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, R θJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. R θJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a) 64°C/W when mounted on a 1in 2 pad of 2 oz copper b) 128°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
同様の部品番号 - FDZ201N_04 |
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同様の説明 - FDZ201N_04 |
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