4

NPN Multi-Chip General Purpose Amplifier

Absolute Maximum Ratings*

T

A

= 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

40

V

Collector-Base Voltage

75

V

Emitter-Base Voltage

5.0

V

Collector Current - Continuous

500

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

 1998 Fairchild Semiconductor Corporation

Thermal Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

FFB2222A

FMB2222A

MMPQ2222A

Total Device Dissipation

Derate above 25

°C

300

2.4

700

5.6

1,000

8.0

mW

mW/

°C

Thermal Resistance, Junction to Ambient

Effective 4 Die

Each Die

415

180

125

240

°C/W

°C/W

°C/W

FFB2222A

FMB2222A

SuperSOT

Mark: .1P

Dot denotes pin #1

C1

E1

C2

B1

E2

B2

pin #1

This device is for use as a medium power amplifier and switch requiring collector

currents up to 500 mA. Sourced from Process 19.

MMPQ2222A

SOIC-16

Mark:

MMPQ2222A

C1

C1

C2

C2

C3

C3

C4

C4

E1

B1

E2

B2

E3

B3

E4

B4

pin #1

NOTE: The pinouts are symmetrical; pin 1 and pin

4 are interchangeable. Units inside the carrier can

be of either orientation and will not affect the

functionality of the device.

C1

B2

E2

E1

B1

C2

pin #1

SC70-6

Mark: .1P