©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FMBS549 Rev. B

tm

August 2006

FMBS549

PNP Low Saturation Transistor

Features

• ThIs device is designed with high current gain and low saturation voltage

with collector currents up to 2A continous.

• Sourced from process PB.

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics *

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage

-30

V

Collector-Base Voltage

-35

V

Emitter-Base Voltage

-5

V

Collector Current - Continuous

- Peak Pulse Current

-1

-2

A

A

Junction Temperature

150

°C

Storage Temperature Range

- 55 ~ 150

°C

Symbol

Parameter

Value

Unit

700

mW

Thermal Resistance, Junction to Ambient

180

°C/W

E

C1

NC

C

C

B

Mark: .S1

pin #1