NX5310_06 datasheet(5/7 Pages) CEL

部品番号	NX5310

部品情報	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE

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メーカー	CEL [California Eastern Labs]

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NX5310 Series

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TYPICAL CHARACTERISTICS (TC =

−40 to +85°C, unless otherwise specified)

0

10

20

30

40

Forward Current IF (mA)

OPTICAL OUTPUT POWER

vs. FORWARD CURRENT

6

5

4

3

2

1

50

+85˚C

+25˚C

TC = –40˚C

OPERATING CURRENT AND THRESHOLD

CURRENT vs. CASE TEMPERATURE

Case Temperature TC (˚C)

1

5

10

50

100

–40

–20

0

20

40

60

80

100

–60

Iop

Ith

TEMPERATURE DEPENDENCE OF

CENTER WAVELENGTH

Case Temperature TC (˚C)

1 350

1 340

1 330

1 320

1 310

1 300

1 290

1 280

1 270

0

–20

–40

–60

20

60

40

80

100

Remark The graphs indicate nominal characteristics.

Data Sheet PL10526EJ02V0DS

5

同様の部品番号 - NX5310_06

メーカー	部品番号	データシート	部品情報
California Eastern Labs	NX5310EH-AZ	342Kb / 5P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
California Eastern Labs	NX5310EK-AZ	342Kb / 5P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS

More results

同様の説明 - NX5310_06

メーカー	部品番号	データシート	部品情報
NEC	NX5321	87Kb / 7P	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
California Eastern Labs	NX5321	190Kb / 7P	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
	NX5322	190Kb / 7P	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
	NX5312	285Kb / 7P	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
NEC	NX5322	94Kb / 7P	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
California Eastern Labs	NX5310	342Kb / 5P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
	NX5312	347Kb / 5P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS
	NX5304	167Kb / 5P	NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
Renesas Technology Corp	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Renesas Technology Corp	PL10692EJ03V0DS	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION