TRANSCOM
TC1102
TRANSCOM, INC., 90 Dasoong 7
th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
9
January 2002
Super Low Noise GaAs FETs
FEATURES
• Low Noise Figure:
NF = 0.5 dB Typical at 12 GHz
• High Associated Gain:
Ga = 13 dB Typical at 12 GHz
• Lg = 0.25 µm, Wg = 160 µm
• All-Gold Metallization for High Reliability
• 100 % DC Tested
DESCRIPTION
The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable
for low noise application including a wide range of commercial and military applications. All devices are
100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression
or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25
°°°°C)
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
NF
Noise Figure at VDS = 2 V, IDS = 10 mA,, f = 12GHz
0.5
0.7
dB
Ga
Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz
11
13
dB
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
40
mA
gm
Transconductance at VDS = 2 V, VGS = 0 V
55
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA
-1.0
Volts
BVDGO
Drain-Gate Breakdown Voltage at IDGO =0.08 mA
58
Volts
Rth
Thermal Resistance
90
°C/W
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