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CDCE401 データシート(PDF) 4 Page - Texas Instruments |
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CDCE401 データシート(HTML) 4 Page - Texas Instruments |
4 / 19 page www.ti.com DETAILED DESCRIPTION CONTROL PIN EN: Enable SINGLE-PIN INTERFACE CONTROL COMMANDS T0130-01 VDD EnterProgramming SequenceandWrite Word0(TrimPPM) EN/SDATA Apply Application VDDandVerify Settings(Measure) Perform StateJump Into Program EEPROM HoldforMinimum 10msto Achieve SafeProgramming JumpFrom State3 State1 ® BackIntoNormal Application After 200- sLow m 2.25V VDD 3.3V £ £ 3.1V VDD 3.3V £ £ 3.1V VDD 3.3V £ £ 2.25V VDD 3.3V £ £ CDCE401 SCAS820 – JUNE 2006 The functions of the EN control pin are listed and explained in Table 2. Table 2. EN Control Pin Functions EN FUNCTION 0 Disabled: all current sources are switched off, output is in the high-impedance state. 1 Enabled: output follows the XIN/XOUT oscillation. The CDCE401 can be configured and programmed via the SDATA input pin. For this purpose, a pulse-code-shaped signal must be applied to the device as shown in the waveforms of Figure 1 to select one of the operation modes described in the State Flow-Diagram of the Single-Pin Interface section. During the EEPROM programming phase, the device requires a stable VDD of 3.2 V ±100 mV for secure writing of the EEPROM cells. After each Write-to-WordX, the written data is latched, made effective, and offers look-ahead before the actual data is stored into the EEPROM. Table 3 summarizes all valid programming commands. Figure 1. Typical Programming Cycle Table 3. Single-Pin Interface Control Commands SDATA FUNCTION 00 1100 Enter register programming mode (state 1 → state 2); bits must be sent in the specified order with the specified timing. Otherwise, a time-out occurs. 11 1011 Enter register read-back mode; bits must be sent in the specified order with the specified timing. Otherwise a time-out occurs. 00 xxxx xxxx Write-to-word0 (state 2) (1)(2)(3) 10 xxxx xxxx Write-to-word1 (state 2) (1) (2) (3) 01 xxxx xxxx Write-to-word2 (state 2) (1) (2) (3) 11 xxxx xxxx State-machine jump: All other patterns not defined as follows cause exit to normal mode. 11 1111 1111 Jump: Exit write-to-RAM (state 2 → state 1) 11 1111 0000 Jump: Enter EEPROM programming without an EEPROM lock (state 2 → state 3) 11 0101 0101 Jump: Enter EEPROM programming with EEPROM lock (state 2 → state 4) 11 0000 0000 Jump: Exit EEPROM programming (state 3 or state 4 → state 1) (1) Each rising edge causes a bit to be latched. (2) Between the bits, some longer time delays can occur, but this has no effect on the data. (3) A Write-to-WordX is expected to be 10 bits long. After the 10th bit, the respective word is latched, and its effect can be observed as look-ahead function. 4 Submit Documentation Feedback |
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同様の説明 - CDCE401 |
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