NE34018 datasheet(2/10 Pages) CEL

部品番号	NE34018

部品情報	GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

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メーカー	CEL [California Eastern Labs]

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2 / 10 page

FREQ.

NFOPT

GA

Γ

ΓOPT

(MHz)

(dB)

MAG

ANG

Rn/50

VDS = 2 V, IDS = 10 mA

900

.56

20.5

.76

30

.45

2000

.63

16.3

.61

41

.28

2500

.68

14.1

.49

51

.18

3000

.70

13.6

.39

49

.16

3500

.76

12.3

.28

71

.12

4000

.82

11.6

.20

80

.10

VDS = 2 V, IDS = 30 mA

2000

.60

17.0

.56

39

.23

2500

.70

15.3

.43

46

.15

3000

.76

14.2

.32

50

.26

VDS = 3 V, IDS = 20 mA

900

.56

20.2

.74

26

1.54

2000

.62

16.8

.62

42

.43

2500

.66

14.9

.56

50

.31

3000

.70

14.0

.45

65

.24

3500

.80

13.2

.36

76

.14

4000

.84

12.8

.29

85

.10

4500

.90

11.0

.20

98

.08

TYPICAL PERFORMANCE CURVES (TA = 25°C)

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS

RATINGS

VDS

Drain to Source Voltage

V

4

VGDO

Gate to Drain Voltage

V

-3

VGSO

Gate to Source Voltage

V

-3

IDS

Drain Current

mA

IDSS

TCH

Channel Temperature

°C

125

TSTG

Storage Temperature

°C

-65 to +125

PT

Total Power Dissipation

mW

150

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

NE34018

TYPICAL NOISE PARAMETERS (TA = 25°C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

Ambient Temperature, TA (˚C)

200

150

100

50

0

50

100

150

200

RTH = 833˚C/W

FREE AIR

20˚C

125˚C

同様の部品番号 - NE34018

メーカー	部品番号	データシート	部品情報
NEC	NE34018	114Kb / 16P	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE34018	250Kb / 18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 2000
NEC	NE34018-T1	114Kb / 16P	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE34018-T1	250Kb / 18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 2000
NEC	NE34018-T2	114Kb / 16P	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

More results

同様の説明 - NE34018

メーカー	部品番号	データシート	部品情報
California Eastern Labs	NE38018	68Kb / 9P	GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
NEC	NE38018	67Kb / 9P	GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
California Eastern Labs	NE3509M04	284Kb / 9P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3510M04	216Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC	NE34018	114Kb / 16P	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3508M04	213Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3509M14	219Kb / 12P	N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
California Eastern Labs	NE3509M04	1Mb / 11P	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3509M04	217Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3509M14	208Kb / 12P	N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier