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MCZ33883EG データシート(PDF) 10 Page - Freescale Semiconductor, Inc |
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MCZ33883EG データシート(HTML) 10 Page - Freescale Semiconductor, Inc |
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10 / 21 page  Analog Integrated Circuit Device Data 10 Freescale Semiconductor 33883 FUNCTIONAL DESCRIPTION INTRODUCTION FUNCTIONAL DESCRIPTION INTRODUCTION The 33883 is an H-bridge gate driver (or full-bridge pre- driver) with integrated charge pump and independent high- and low-side driver channels. It has the capability to drive large gate-charge MOSFETs and supports high PWM frequency. In sleep mode its supply current is very low. FUNCTIONAL TERMINAL DESCRIPTION SUPPLY VOLTAGE TERMINALS (VCC AND VCC2) The VCC and VCC2 terminals are the power supply inputs to the device. VCC is used for the output high-side drivers and the charge pump. VCC2 is used for the linear regulation. They can be connected together or independent with different voltage values. The device can operate with VCC up to 55 V and VCC2 up to 28 V. The VCC and VCC2 terminals have undervoltage (UV) and overvoltage (OV) shutdown. If one of the supply voltage drops below the undervoltage threshold or rises above the overvoltage threshold, the gate outputs are switched LOW in order to switch off the external MOSFETs. When the supply returns to a level that is above the UV threshold or below the OV threshold, the device resumes normal operation according to the established condition of the input terminals. INPUT HIGH- AND LOW-SIDE TERMINALS (IN_HS1, IN_HS2, AND IN_LS1, IN_LS2) The IN_HSn and IN_LSn terminals are input control terminals used to control the gate outputs. These terminals are 5.0 V CMOS-compatible inputs with hysteresis. IN_HSn and IN_LSn independently control GATE_HSn and GATE_LSn, respectively. During wake-up, the logic is supplied from the G_EN terminal. There is no internal circuit to prevent the external high-side and low-side MOSFETs from conducting at the same time. SOURCE OUTPUT HIGH-SIDE TERMINALS (SRC_HS1 AND SRC_HS2) The SRC_HSn terminals are the sources of the external high-side MOSFETs. The external high-side MOSFETs are controlled using the IN_HSn inputs. GATE HIGH- AND LOW-SIDE TERMINALS (GATE_HS1, GATE_HS2, AND GATE_LS1, GATE_LS2) The GATE_HSn and GATE_LSn terminals are the gates of the external high- and low-side MOSFETs. The external high- and low-side MOSFETs are controlled using the IN_HSn and IN_LSn inputs. GLOBAL ENABLE (G_EN) The G_EN terminal is used to place the device in a sleep mode. When the G_EN terminal voltage is a logic LOW state, the device is in sleep mode. The device is enabled and fully operational when the G_EN terminal voltage is logic HIGH, typically 5.0 V. CHARGE PUMP OUT (CP_OUT) The CP_OUT terminal is used to connect an external reservoir capacitor for the charge pump. CHARGE PUMP CAPACITOR TERMINALS (C1 AND C2) The C1 and C2 terminals are used to connect an external capacitor for the charge pump. LINEAR REGULATOR OUTPUT (LR_OUT) The LR_OUT terminal is the output of the internal regulator. It is used to connect an external capacitor. GROUND TERMINALS (GND_A, GND1 AND GND2) These terminals are the ground terminals of the device. They should be connected together with a very low impedance connection. |
同様の部品番号 - MCZ33883EG |
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同様の説明 - MCZ33883EG |
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