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MPVZ5150 データシート(PDF) 3 Page - Freescale Semiconductor, Inc

部品番号. MPVZ5150
部品情報  Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
ダウンロード  7 Pages
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メーカー  FREESCALE [Freescale Semiconductor, Inc]
ホームページ  http://www.freescale.com
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MPVZ5150 Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc

   
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MPVZ5150
Sensors
Freescale Semiconductor
3
ON-CHIP TEMPERATURE COMPENSATION, CALIBRATION AND SIGNAL CONDITIONING
Figure 2 shows the sensor output signal relative to
pressure input. Typical, minimum, and maximum output
curves are shown for operation over a temperature range of
0° to 85°C using the decoupling circuit shown in Figure 4. The
output will saturate outside of the specified pressure range.
Figure 3 illustrates the Differential or Gauge configuration
in the basic chip carrier (Case 482). A gel isolates the die
surface and wire bonds from the environment, while allowing
the pressure signal to be transmitted to the silicon diaphragm.
Operating characteristics, internal reliability and qualification
tests are based on use of dry clean air as the pressure media.
Media other than dry clean air may have adverse effects on
sensor performance and long term reliability. Contact the
factory for information regarding media compatibility in your
application.
Figure 2. Output Vs. Pressure Differential
Figure 3. Cross Sectional Diagrams (Not to Scale)
Figure 4 shows the recommended decoupling circuit for
interfacing the output of the integrated sensor to the A/D input
of a microprocessor or microcontroller. Proper decoupling of
the power supply is recommended.
Figure 4. Recommended Power Supply Decoupling and Output Filtering
(For additional output filtering, please refer to Application Note AN1646)
5
4
3
2
1
0
Offset
Pressure (kPa)
(Typ)
Vout = VS*(0.006*P(kPa)+0.04)
± (PE * TM * 0.006 * Vs)
VS = 5.0 V ± 0.25 Vdc
PE = 3.75 kPa
TM = 1 @ 0 to 85°C
TM = 3 @ +125°C
TM = 3 @ -40°C
Vs = 5.0 V +/- 0.25 Vdc
MAX
TYP
MIN
Gel Die Coat
Wire Bond
Die
P1
Stainless
Steel Cap
Thermoplastic
Case
Die Bond
Differential Sensing
Element
P2
Lead Frame
470 pF
Vs
+5.0 V
0.01 µF
GND
VOUT
IPS
OUTPUT
1.0 µF
IPS
OUTPUT


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