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BAT86 データシート(PDF) 3 Page - NXP Semiconductors |
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BAT86 データシート(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2000 May 25 3 Philips Semiconductors Product specification Schottky barrier diode BAT86 ELECTRICAL CHARACTERISTICS Tamb =25 °C; unless otherwise specified. Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD68 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.3 IF = 0.1 mA 300 mV IF = 1 mA 380 mV IF = 10 mA 450 mV IF = 30 mA 600 mV IF = 100 mA 900 mV IR reverse current VR = 40V; see Fig.4; note 1 5 µA trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.6 4ns Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.5 8 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 320 K/W |
同様の部品番号 - BAT86_00 |
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同様の説明 - BAT86_00 |
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