SB220S – SB2100S

1 of 4

© 2006 Won-Top Electronics

Pb

SB220S – SB2100S

2.0A SCHOTTKY BARRIER DIODE

Features

!

Schottky Barrier Chip

!

Guard Ring Die Construction for

Transient Protection

!

High Current Capability

A

B

A

!

Low Power Loss, High Efficiency

!

High Surge Current Capability

!

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

C

D

Mechanical Data

!

Case: DO-41, Molded Plastic

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Weight: 0.34 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

!

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

SB

220S

SB

230S

SB

240S

SB

250S

SB

260S

SB

280S

SB

2100S

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

20

30

40

50

60

80

100

V

RMS Reverse Voltage

14

21

28

35

42

56

70

V

Average Rectified Output Current

(Note 1)

2.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

50

A

Forward Voltage

0.50

0.70

0.85

V

Peak Reverse Current

At Rated DC Blocking Voltage

0.5

10

mA

Typical Junction Capacitance (Note 2)

170

140

pF

Typical Thermal Resistance (Note 1)

45

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

WTE

POWER SEMICONDUCTORS

DO-41

Dim

Min

Max

A

25.4

—

B

4.06

5.21

C

0.71

0.864

D

2.00

2.72

All Dimensions in mm