IRL1104S datasheet(4/10 Pages) IRF

部品番号	IRL1104S

部品情報	Advanced Process Technology Logic-Level Gate Drive

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メーカー	IRF [International Rectifier]

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IRL1104S/L

4

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Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

20

40

60

80

0

2

4

6

8

10

Q , Total Gate Charge (nC)

G

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

62 A

V

= 20V

DS

V

= 32V

DS

1

10

100

1000

10000

1

10

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

= 175 C

= 25 C

°

J

C

V

, Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

1

10

100

0

1000

2000

3000

4000

5000

6000

V

, Drain-to-Source Voltage (V)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C

SHORTED

GS

iss

gs

gd ,

ds

rss

gd

oss

ds

gd

Ciss

Coss

Crss

0.1

1

10

100

1000

0.2

0.8

1.4

2.0

2.6

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 175 C

J

°

T = 25 C

J

°

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