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SI9925DY データシート(PDF) 5 Page - NXP Semiconductors |
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SI9925DY データシート(HTML) 5 Page - NXP Semiconductors |
5 / 13 page Philips Semiconductors Si9925DY N-channel enhancement mode field-effect transistor Product data Rev. 01 — 20 July 2001 5 of 13 9397 750 08415 © Philips Electronics N.V. 2001. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics VGS(th) gate-source threshold voltage ID = 250 µA; VDS =VGS; Figure 9 0.8 −− V IDSS drain-source leakage current VDS =16V; VGS =0V; Tj =25 °C −− 1 µA VDS =10V; VGS =0V; Tj =70 °C −− 5 µA IGSS gate-source leakage current VGS = ±12 V; VDS =0V −− 100 nA RDSon drain-source on-state resistance VGS = 10 V; ID =10A; Figure 7 and 8 25 38 45 m Ω VGS = 4.5 V; ID =5A; Figure 7 and 8 − 41 50 m Ω VGS =3V; ID = 3.9 A; Figure 7 and 8 − 50 60 m Ω VGS = 2.5 V; ID =1A; Figure 7 and 8 − 62 80 m Ω Dynamic characteristics gfs forward transconductance VDS =15V; ID =10A − 14 − S Qg(tot) total gate charge ID = 5 A; VDS =6V; VGS = 4.5 V; Figure 13 − 920 nC Qgs gate-source charge − 2 − nC Qgd gate-drain (Miller) charge − 2.6 − nC td(on) turn-on delay time VDD =6V; RD =6 Ω; VGS =10V; RG =6 Ω− 14 40 ns tr turn-on rise time − 13 30 ns td(off) turn-off delay time − 35 60 ns tf turn-off fall time − 930 ns Source-drain (reverse) diode VSD source-drain (diode forward) voltage IS = 2.3A; VGS =0V; Figure 12 − 0.81 1.2 V trr reverse recovery time IS = 5 A; dIS/dt = −100 A/µs; VGS =0V − 60 150 ns |
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