Philips Semiconductors

Si9936DY

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 16 July 2001

6 of 13

9397 750 08413

© Philips Electronics N.V. 2001. All rights reserved.

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03af69

0

10

20

30

40

0

0.5

1

1.5

2

2.5

3

VDS (V)

ID

(A)

3.5 V

5 V

4.5 V

4 V

10 V

3 V

VGS = 2 V

2.5 V

6 V

Tj = 25 ºC

03af71

0

10

20

30

40

01234567

VGS (V)

ID

(A)

VDS > ID x RDSon

Tj = 150 ºC

25 ºC

03af70

0

0.02

0.04

0.06

0.08

0

10203040

ID (A)

RDSon

(

Ω)

Tj = 25 ºC

VGS = 4.5 V 5 V

6 V

10 V

03ad57

0

0.4

0.8

1.2

1.6

2

-60

0

60

120

180

a

a

R

DSon

R

DSon 25 C

°

()

----------------------------

=