STD60NF55L-1 datasheet(5/14 Pages) STMICROELECTRONICS

部品番号	STD60NF55L-1

部品情報	N-channel 55V - 0.012廓 - 60A - DPAK/IPAK STripFET??II Power MOSFET

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STD60NF55L - STD60NF55L-1

Electrical characteristics

5/14

Table 5.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

60

240

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward on voltage

ISD = 60A, VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 40A, di/dt = 100A/µs,

VDD = 25V, Tj = 150°C

(see Figure 14)

65

130

4

ns

nC

A

同様の部品番号 - STD60NF55L-1

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	STD60NF55L-1	979Kb / 7P	N-Channel 60 V (D-S) MOSFET

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同様の説明 - STD60NF55L-1

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