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STP4NK80Z データシート(PDF) 4 Page - STMicroelectronics |
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4 / 18 page Electrical ratings STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 4/18 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Table 3. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 3A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 190 mJ Table 4. Gate-source zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V |
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同様の説明 - STP4NK80Z |
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