N Channel Enhancement Mode MOSFET

ST2306

3.5A

DESCRIPTION

The ST2306 is the N-Channel logic enhancement mode power field effect transistor is

produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and

notebook computer power management and other batter powered circuits, and low in-line

power loss are needed in a very small outline surface mount package.

PIN CONFIGURATION

SOT-23-3L / SOT-23

1.Gate

2.Source

3.Drain

S: Subcontractor

Y: Year Code

A: Process Code

Page 1

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

FEATURE

@VGS = 10V

@VGS = 5V

Super high density cell design for

Exceptional on-resistance and maximum

DC current capability

SOT-23-3L /SOT-23 package design

3

1

2

D

G

S

3

1

2

06YA